2026-11-06Development of High-Performance Screen-Printed Flexible Thermoelectric Generators via ZIF-67/Ag/NH2-MWCNT Composite Ink Formulations
ACS Applied Electronic Materials
优化的2% ZIF-67复合墨水柔性热电器件塞贝克系数提高1.32倍，功率输出和功率密度分别提高3.55倍和3.58倍，3000次弯曲后性能稳定。
Thermoelectric
2026-11-06Flexible LiCl-V₂O₅/TPU-PVP Nanocomposites for Ion-Dominated Thermoelectric Transport
Materials Advances
该柔性离子热电纳米复合材料在298 K时Seebeck系数达27.7 mV/K，离子迁移数为0.994，热导率仅0.133–0.139 W/m·K。
2026-11-05Manipulating diverse degrees of freedom in MnTe: Pathways toward enhanced thermoelectric performance
Applied Physics Reviews
综述指出通过自旋、电荷、轨道、晶格与相变等多自由度协同调控，MnTe基热电材料的峰值zT已从本征的不足1提升至优化组成的1.6以上。
https://pubs.aip.org/aip/apr/article-pdf/doi/10.1063/5.0322469/21193345/041322_1_5.0322469.pdf
2026-11-05First-principles study of halide double perovskite Rb2GeNiCl6: a stable magnetic semiconductor for spintronic and thermoelectric applications
RSC Advances
第一性原理预测Rb2GeNiCl6为铁磁半导体，室温热电优值ZT达0.92，Ni磁矩为2 μB。
2026-11-05Synergistic Carrier and Interface Engineering Enables High-Power Flexible Sb2Te3 Thermoelectric Devices
ACS Applied Energy Materials
协同优化载流子与界面工程，制成高功率柔性Sb2Te3热电器件，面向可穿戴电子与低品位热回收。
2026-11-05Manipulating diverse degrees of freedom in MnTe: Pathways toward enhanced thermoelectric performance
Applied Physics Reviews · Review
综述 MnTe 基热电材料：从自旋、电荷、轨道、晶格、相变五个维度调控，优化后峰值 ZT 从低于 1 提升到 1.6 以上。
2026-11-04Longitudinal and Transverse Thermoelectric Properties in Topological Quantum Materials
arXiv
拓扑热电材料中重原子导致低晶格热导率、线性色散的狄拉克带带来高电迁移率、多能谷带边结构带来高塞贝克系数。
2026-11-04Interfacial Doping and Band Bending Boosting Thermoelectric Power Factor in 1T′-MoTe2/Bi2Te3 Quantum-Dot Films
ACS Applied Materials & Interfaces
异质界面可有效调控载流子输运，界面掺杂与能带弯曲提升了1T′-MoTe2/Bi2Te3量子点薄膜的热电功率因子。
2026-11-04Machine Learning Prediction of Bulk Bi2Te3 Thermoelectric Properties
ACS Applied Energy Materials · Subash Chandra Bose Rapaka
用 740 个样本（151 篇文献）测试机器学习预测体相 Bi2Te3 的塞贝克系数、电导率、功率因子、热导率和 zT：随机划分时 zT 的 R²=0.72，未见实验室降至 0.43；补 3 个实测样本后可回升至 0.64。
2026-11-03Thermoelectric properties of quasi-skutterudite single crystals M5Rh6Sn18 (M = Sc, Y, Lu)
APL Materials
准方钴矿单晶的热电性质：300 K 时晶格热导率 ≤2 W/mK，Lu 样品功率因子约 0.9 μW cm−1 K−2、ZT 约 0.005，整体热电性能一般。
2026-11-03Large transverse thermoelectric effect in graphene nanostructures
Nature Communications · Han, Guo, Wang et al.
室温、零磁场下亚微米石墨烯器件的横向热电效应（BTTE），横向塞贝克系数 27.9 μV/K，横向热电功率因子约 35.8 μW cm−1 K−2，可用于纳米尺度热流传感与能量收集。
Lattice Thermal Conductivity
2026-11-05Anomalously Low Thermal Conductivity in Undercoordinated Amorphous Silicon
Physical Review Letters
高压相工程制备的非晶硅在300 K时热导率低至0.67 W/m·K，比Cahill-Watson-Pohl基准低约33%，归因于高压快速淬火产生的欠配位Si位点。
2026-11-04Balanced electron and phonon heat transport in metallic ε-TaN
Physical Review B
金属 ε-TaN 同时有可观的电子热导率和晶格热导率：单晶室温总热导率 273±5 W/mK，其中晶格贡献占 79%，多晶（0.5 μm 晶粒）为 145±5 W/mK。
2026-11-03Lattice Softening and Defect-Induced Phonon Scattering Drive Near-Minimum Lattice Thermal Conductivity in Sb- and S-Alloyed BiSe
ACS Applied Energy Materials
Sb 合金化使 BiSe 室温晶格热导率从约 0.90 降至 0.38 W/mK（降 57.8%），再掺 S 降至约 0.33 W/mK，总计降约 63.3%，接近最小值。
2026-11-03Revealing Anisotropic Dielectric and Thermal Behavior in Layered Ca3Co4O9 Thin Films
ACS Applied Energy Materials
层状 Ca3Co4O9 的各向异性热学行为：体材料热导率 0.62 W/mK，LaAlO3 / MgO 上薄膜的有效厚度方向热导率分别为 0.91 / 1.46 W/mK。
Carrier Mobility
2026-11-04Multifunctional Phase Engineering Expands the Carrier Concentration Optimization Window for High-Performance Mg3(Bi, Sb)2 Thermoelectrics
Advanced Functional Materials
NbC促进晶粒长大、抑制晶界散射从而提高载流子迁移率，复合材料在300–573 K平均功率因子达3.1 mW·m⁻¹·K⁻²，523 K时zT最高约1.3，单腿器件在温差282 K下转换效率约5.5%。
https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.79401
2026-11-04Vacuum annealing effects on the transport and thermoelectric properties of the novel layered Bi-chalcogenide LaOBiSnS3
Materials Research Express
真空退火主要通过大幅提高载流子迁移率降低电阻率，ZT在773 K达约0.20，比未退火样品的约0.07提高约2.9倍。
https://iopscience.iop.org/article/10.1088/2053-1591/aebaf0/pdf
2026-11-03Site-Selective Doping Chemistry on Quaternary Diamondoid Thermoelectrics Cu2ZnSnSe4
ACS Applied Energy Materials
Cd / Zn 掺杂同时提高空穴浓度和迁移率（抑制阳离子无序、趋向理想晶格对称），室温电导率分别达 1200 / 900 S/cm；再经 Ag 合金化降低晶格热导率，峰值 ZT 0.54（800 K）。